one.. ?_/ 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRFZ10 hexfet* power mosfet dynamic dv.'dt rating 175-c operating ternp?ralijr? fasl switching fn=,e rl pa'alleing simple drive requirements = 0.2012 the to-220 package is universally tirt?furr?d luf all rommercial-industnal appkaliors at oower dissipation levete 10 appiojumalety 50 rtatts. t>j luw tlwrmal r??stanefl aix) ow pacna^e cosi oi the to-220 ccnlribute to acceptance ihroucfioul the industry. to-220ab g gate d drain s source absolute maximum ratings in <& to = 25"c i'j*' to" 100'c i? pc @ tc - 25"c eab j'/'ut tj tstc. paierne-tef ccnlmucus drar currcni, vi/: s ;o v max_ 10 continuous drar curreni, vgs 9 1 0 v 7 2 pulsed drain current i 40 power dissipation unear denting factor gale-10-sou'ce voltage :-ir;gly klli^ a.,ri i-.rtji* :nf-'i|v peak diode recovery dv/dt -1 operating juricjion and storage tempwature ran^e soldering temperature, for 10 sgcords .jll!'., a 43 | w 0.29 w/"c 120 v 47 _ -55 10+175 300 {1 6mm from case) mj v/ns -c 10 tof-ir, (1.1 n*m) thermal resistance \1 ;4 .. j.jnci of-io-c,-s:' - :- ?..!..-?. in-oi-k =.. it. grossed yj-tace -i,.,,.. i: . ?? - -r -?- arrhieni v n. ? ? ? 1 ' - 0.50 ? wax 3.5 62 ...i-. ?ow nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRFZ10 electrical characteristics @ tj = 25 c (unless otherwise specified) vjwjoge \vhk;.j::..;it. -; ,? , vast*) g* loss igss parameter drain-to-sourcc breakdown voltage breakdown voltage temp. coefficient m ? . y::. 60 ? o.cb3 static drain-to- source on-resistance gate threshold voltage forward transconductance drain-to-source leakage current gate-to-sourc* forward leakage gate-lo-sourcc reverse leakage 2.0 24 ? _ ? qa 1 total gate charge qjb q* gate-to-soufce charge gate-lo-drain ('miller"} charge toion] 1 turn-oi delay 1 im<; i, pi . 1 -[.; ? 10 -30 max. unrs v ? we test conditions vas-ov. 10- 250fia hefer9ncfitr>?5'0. h= 1ma v.-,- ??:.',? i-: hoa -i 4.0 v vijs=vti.;. ,;._250ua ? s 25 250 1 1)0 -1'jc) i ' ... 5.8 ? tdiati! 1 turn-oft delay time 13 ? tr lo ls fall time internal drain inductance internal source inductance ? 19 ? 4.5 7.5 ? ? c? input capacitance j ? 30c crm cl66 output capac tance rpvhisc transfer cep.nctr\ncr- ! 60 ?0 ? ha pa nc vos=25v. b=6.0a ? |
